網(wǎng)站首頁 > 技術(shù)文庫 > RFIC >
[ 8] Khan A, Chen M, Sun Q, et al. Two- dimensional Electron Gas in GaN-AlGaN Heterostructure Deposited Using Trimethylamine- alane as the Aluminum Source in Low Pressure Metalorganic Chemical Vapor Deposition[ J] . Appl Phys Lett, 1995, 67( 10) : 1429- 1431.
[ 9] Khan M A, Kkuznia J N, Olson D T, et al. Microwave Performance of a 025 m Gate AlGaN/ GaN Heterostructure Field Effect Transistors[ J] . Appl Phys Lett, 1994, 65( 9) : 1121-1 123.
[ 10] Sullivam G J, Chen M Y, Higgin J A, et al. High- power 10GHz Operation of AlGaN HFETs on Insulating SiC[ J] . IEEE Electron Device Letters, 1998, 19( 6) : 198-200.
[ 11] Khan M A, Yang J W, Knap W, et al. GaN-AlGaN Heterostructure Field- effect Transistors Over Bulk GaN Substrates[ J] . Appl PhyLett, 2000, 76( 25) : 3 807- 3809.
[ 12] Jvarka P, Alam A, Fox A, et al. AlGaN/ GaN HETMs on Silicon Substrate with fT of 32/ 20GHz and f max of 27/ 22GHz for 05/ 0 7m Gate Length[ J] . Electronics Letters, 2002, 38( 6) : 288- 289.
[ 13] Burm J, Schaff W J, Eastman L F. 75 A GaN Channel Modulation Doped Field Effect Transistors[ J] . Appl Phy Lett, 1996, 68( 20) :2 849- 2 851.
[ 14] Binari S, Doverspilce K, Kelner G, et al. GaN FETs for Microwave and High- temperature Applications[ J] . Solid- State Electronics,1997, 41( 2) : 177- 180.
[ 15] 袁明文, 潘 靜 氮化鎵微波電子學(xué)的進(jìn)展[ J] 半導(dǎo)體情報(bào), 1999, 36( 3) : 1- 9.
[ 16] Khan M A, Kuznia J N, Bhattarai A R, et al. Metal Semiconductor Field Effect Transistor Based on Single Crystal GaN[ J] . Appl Phys Lett, 1993, 62( 15) : 1 786- 1787.
[ 17] 宋登元GaN 的某些關(guān)鍵工藝及其進(jìn)展[ J] 半導(dǎo)體情報(bào), 1997, 34( 4) : 31- 35.
[ 18] Fan Z, Mohammad S N. Low Resistance Ohmic Contact for Highly Doped n- type GaN Films[ J] . Appl Phys Lett, 1996, 68( 6) : 794-796.
[ 19] Cole M W, Ren F, Pearton S J. Post Growth Rapid Thermal Annealing of GaN: the Relationship Between Annealing Temperature, GaN Crystalquality, and Contac-t GaN Interfacial Structure[ J] . Appl Phys Lett, 1997, 71( 20) : 3004-3 006.
[ 20] Melane G E, Casas H, Deatron S J, et al. High Etch Rates of GaN with Magnetron Reactive Ion Etching BCl3 Plasmas[ J] . Appl Phys Lett, 1995, 66( 24) : 3 328- 3330.
作者:楊燕、郝躍、張進(jìn)城、李培咸,西安電子科技大學(xué)微電子研究所