毛片视频免费观看-毛片视频在线免费观看-毛片手机在线视频免费观看-毛片特级-中文亚洲字幕-中文一级片

GaN基微波半導(dǎo)體器件研究進(jìn)展

2008-03-11 來源:互聯(lián)網(wǎng) 字號(hào):

[ 8] Khan A, Chen M, Sun Q, et al. Two- dimensional Electron Gas in GaN-AlGaN Heterostructure Deposited Using Trimethylamine- alane as the Aluminum Source in Low Pressure Metalorganic Chemical Vapor Deposition[ J] . Appl Phys Lett, 1995, 67( 10) : 1429- 1431.
[ 9] Khan M A, Kkuznia J N, Olson D T, et al. Microwave Performance of a 025 m Gate AlGaN/ GaN Heterostructure Field Effect Transistors[ J] . Appl Phys Lett, 1994, 65( 9) : 1121-1 123.
[ 10] Sullivam G J, Chen M Y, Higgin J A, et al. High- power 10GHz Operation of AlGaN HFETs on Insulating SiC[ J] . IEEE Electron Device Letters, 1998, 19( 6) : 198-200.
[ 11] Khan M A, Yang J W, Knap W, et al. GaN-AlGaN Heterostructure Field- effect Transistors Over Bulk GaN Substrates[ J] . Appl PhyLett, 2000, 76( 25) : 3 807- 3809.
[ 12] Jvarka P, Alam A, Fox A, et al. AlGaN/ GaN HETMs on Silicon Substrate with fT of 32/ 20GHz and f max of 27/ 22GHz for 05/ 0 7m Gate Length[ J] . Electronics Letters, 2002, 38( 6) : 288- 289.
[ 13] Burm J, Schaff W J, Eastman L F. 75 A GaN Channel Modulation Doped Field Effect Transistors[ J] . Appl Phy Lett, 1996, 68( 20) :2 849- 2 851.
[ 14] Binari S, Doverspilce K, Kelner G, et al. GaN FETs for Microwave and High- temperature Applications[ J] . Solid- State Electronics,1997, 41( 2) : 177- 180.
[ 15] 袁明文, 潘 靜 氮化鎵微波電子學(xué)的進(jìn)展[ J] 半導(dǎo)體情報(bào), 1999, 36( 3) : 1- 9.
[ 16] Khan M A, Kuznia J N, Bhattarai A R, et al. Metal Semiconductor Field Effect Transistor Based on Single Crystal GaN[ J] . Appl Phys Lett, 1993, 62( 15) : 1 786- 1787.
[ 17] 宋登元GaN 的某些關(guān)鍵工藝及其進(jìn)展[ J]  半導(dǎo)體情報(bào), 1997, 34( 4) : 31- 35.
[ 18] Fan Z, Mohammad S N. Low Resistance Ohmic Contact for Highly Doped n- type GaN Films[ J] . Appl Phys Lett, 1996, 68( 6) : 794-796.
[ 19] Cole M W, Ren F, Pearton S J. Post Growth Rapid Thermal Annealing of GaN: the Relationship Between Annealing Temperature, GaN Crystalquality, and Contac-t GaN Interfacial Structure[ J] . Appl Phys Lett, 1997, 71( 20) : 3004-3 006.
[ 20] Melane G E, Casas H, Deatron S J, et al. High Etch Rates of GaN with Magnetron Reactive Ion Etching BCl3 Plasmas[ J] . Appl Phys Lett, 1995, 66( 24) : 3 328- 3330.

作者:楊燕、郝躍、張進(jìn)城、李培咸,西安電子科技大學(xué)微電子研究所

主站蜘蛛池模板: 四虎影视国产精品永久在线| 亚州免费一级毛片| 午夜精品久久久| 欧美性一区二区三区五区| 香蕉国产一区二区| 天天久久综合| 亚洲一区二区视频在线观看| 午夜高清性色生活片| 亚洲福利一区福利三区| 亚洲自拍偷拍网| 天天综合天天做| 欧美亚洲h在线一区二区| 亚洲www美色| 青草草产国视频| 色综合久久久久| 欧美三级蜜桃2在线观看| 日韩一级黄色影片| 亚洲欧美精品一区二区| 一本之道久久| 日韩欧美在线综合网高清| 午夜精品久久久久久久99蜜桃i| 欧美一级片网站| 欧美激情观看一区二区久久| 欧美成人动漫在线观看| 亚洲一区二区精品| 香蕉久草| 欧美一级看片a免费观看| 亚洲精品成人中文网| 性片网址| 欧美一级特黄高清免费| 日韩一区二区三区免费视频| 日本高新1区2区3区| 欧洲午夜视频| 涩涩在线观看免费视频| 日本国产在线| 色综合久久久久综合体桃花网| 午夜视频a| 亚洲天堂自拍| 欧美日韩激情在线一区| 欧美成人中文字幕在线视频| 亚洲二区在线视频|